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| MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63836FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE PIN CONFIGURATION NC IN1 IN2 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 DESCRIPTION The M63836FP/KP 8-channel sinkdriver, consists of 8 PNP and 16 NPN transistors connected to from eight high current gain driver pairs. COM COMMON O1 O2 O3 O4 OUTPUT O5 O6 O7 O8 VCC NC : No connection FEATURES G High breakdown voltage (BVCEO 50V) G High-current driving (IC(max) = 500mA) G 3V micro computer compatible input G "L" active level input G With input diode G With clamping diodes G Wide operating temperature range (Ta = -40 to +85C) IN3 IN4 INPUT IN5 IN6 IN7 IN8 GND 20P2N-A(FP) Package type 20P2E-A(KP) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. CIRCUIT DIAGRAM VCC FUNCTION The M63836FP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5k is connected between the input and the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of current from the input to the Vcc. without this diode, the current flows from "H" input to the Vcc and the "L" input circuit is activated, in such a case where one of the inputs of the 8 circuit is "H" and the other are "L" to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. 20K INPUT 3.5K 1.05K 7.2K 3K COM OUTPUT GND The eight circuits share the Vcc, COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI IF VR Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ratings 7 -0.5 ~ +50 500 -0.5 ~ VCC 500 50 1.10(FP)/0.68(KP) -40 ~ +85 -55 ~ +125 Unit V V mA V mA V W C C Sep. 2001 Ta = 25C, when mounted on board MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63836FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VCC Supply voltage (Unless otherwise noted, Ta = -40 ~ +85C) Parameter Limits min 2.7 0 typ 3.0 -- max 3.6 400 Unit V IC Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) Duty Cycle FP : no more than 4% KP : no more than 2% Duty Cycle FP : no more than 15% KP : no more than 6% mA 0 VCC-0.5 0 -- -- -- 200 VCC VCC-2.2 V V VIH VIL "H" input voltage "L" input voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol V (BR) CEO VCE(sat) Parameter Test conditions Limits min 50 -- -- -- -- -- -- 2000 typ -- 1.15 0.93 -220 1.4 0.1 2.6 10000 max -- 2.4 1.6 -600 2.4 100 4.0 -- Unit V V A V A mA -- II VF IR ICC hFE : Typical values are at Ta = 25C Collector-emitter breakdown voltage ICEO = 100A VCC = 2.7V, VI = 0.5V, IC = 400mA Collector-emitter saturation voltage VCC = 2.7V, VI = 0.5V, IC = 200mA Input current VI = VCC-2.2V Clamping diode forward volltage IF = 400mA Clamping diode reverse current VR = 50V Supply current (AN only Input) VCC = 3.6V, VI = 0.5V DC amplification factor VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25C SWITCHING CHARACTERISTICS Symbol ton toff Parameter Turn-on time Turn-off time (Unless otherwise noted, Ta = 25C) Test conditions CL = 15pF (note 1) Limits min -- -- typ 120 4500 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device OPEN PG 50 OUTPUT VO TIMING DIAGRAM INPUT 50% 50% RL OUTPUT CL 50% 50% ton (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Sep. 2001 MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63836FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 500 Vcc=2.7V VI=0.5V Thermal Derating Factor Characteristics 2.0 Power dissipation Pd(max) (W) 1.5 M63836FP Collector current Ic (mA) 400 300 1.10 1.0 0.68 M63836KP 0.572 0.354 200 Ta= 25C 0.5 100 Ta= 85C Ta= -20C 0 0 25 50 75 85 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63836FP) 500 1 Duty Cycle-Collector Characteristics (M63836GFP) 500 Collector current Ic (mA) 300 Collector current Ic (mA) 400 400 2 3 4 5 6 7 8 300 1 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 25C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 85C 2 3 45 6 7 8 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Duty Cycle-Collector Characteristics (M63836KP) 500 500 Duty Cycle-Collector Characteristics (M63836KP) *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneouslyoperated circuit. *Vcc = 3V *Ta = 85C Collector current Ic (mA) 300 1 Collector current Ic (mA) 400 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Vcc = 3V *Ta = 25C 2 3 4 5 6 7 8 200 1 2 3 45 67 8 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Sep. 2001 MITSUBISHI SEMICONDUCTOR . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY M63836FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics 105 500 VCE=2V Ta=85C 7 5 3 2 Output Current Characteristics VCE=2V DC amplification factor hFE Collector current IC (mA) 400 Ta=85C 104 7 5 3 2 300 Ta=25C Ta=-40C 200 103 7 5 3 2 Ta=25C Ta=-40C 100 102 1 10 2 3 5 7 102 2 3 5 7 103 0 0 0.4 0.8 1.2 1.6 2.0 Collector current IC (mA) Input voltage Vcc-VI (V) Input Characteristics -0.6 VCC=3V Driver Supply Characteristics 20.0 VI=0.5V -0.4 -0.3 Ta=85C Supply Current Icc (mA) -0.5 16.0 Input Current II (mA) 12.0 Ta=25C Ta=-40C 8.0 -0.2 Ta=25C -0.1 Ta=-40C 4.0 Ta=85C 0 0 1 2 3 0 0 2 4 6 8 10 Input voltage Vcc-VI (V) Supply voltage Vcc (V) Clamping Diode Characteristics 500 Forward bias current IF (mA) 400 300 200 Ta=25C 100 Ta=85C Ta=-40C 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Sep. 2001 |
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